Wednesday, June 1, 2011

Samsung: 32 GB DDR3 "30 nm" in RDIMM

Samsung has announced the launch of mass production of modules from 32 GB DDR3 RDIMM format using memory chips with 4 Gb etched 3x nm. For servers and workstations, these RDIMM memory modules operate at a frequency of 1866 MHz with a voltage of 1.35 V. For comparison, the previous 32 GB modules equipped with chips etched 4x nm operating at only 1333 MHz with a voltage of 1.5 V.

The new DDR3 RDIMM memory modules should be both faster and more energy efficient than previous ones. It remains to know the price ...

No comments:

Post a Comment