Researchers at the University of Santa Barbara in partnership with scientists from HP, published a study of atomic phenomena, heat and chemicals that occur within a memristor in titanium oxide. This research is so promising that HP envisions a marketing first memristors in 2013. The memristors are approached to replace DRAM and even Flash.
The paper was published today in the journal Nanotechnology. It is available this month on the Internet. It provides details on the yet unknown changes in strength of this component. The memristors represent the fourth passive component electrical capacitors, resistors and coils. Broadly, they have several levels of electrical resistance.
The paper was published today in the journal Nanotechnology. It is available this month on the Internet. It provides details on the yet unknown changes in strength of this component. The memristors represent the fourth passive component electrical capacitors, resistors and coils. Broadly, they have several levels of electrical resistance.