Wednesday, July 13, 2011

Hynix and Toshiba join forces for the STT-MRAM

Hynix and Toshiba have announced they will collaborate on the development of STT-MRAM and to unite in a joint venture for their manufacture. They also held an exchange of patents and have entered into agreements for deliveries. As clearly stated in Toshiba press release, is also a way to reduce the risks associated with marketing a new memory.

The announcement comes a week after Toshiba has published some interesting research on tunnel junctions with perpendicular magnetisation that require less power (see "Toshiba come out a STT-MRAM in 3 years"). These structures are central to the STT-MRAM memory or Spin-Transfer Torque Magnetoresistive Random Access Memory.

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