Thursday, April 21, 2011

Of 19 nm NAND flash from Toshiba

While Intel and Micron have just opened a plant in Singapore for the manufacture of 25 nm NAND on the waters of 300 mm, and Intel recently announced its etching technology NAND flash memory in 20 nm Here we learned that Toshiba is already in the process of developing NAND flash memory chips etched into 19 nm.

Thus, if the first 20 nm chips in IM Flash Technogologies should leave the plants in the second half of 2011, the first copies of NAND flash memory chips 2-bit MLC 64 GB (8 GB) in 19-nm Toshiba should be available by the end of the month, with mass production expected in the third quarter of this year.

The manufacturer should then migrate its production of 3-bit MLC chips to this fine engraving. Remains to be seen what impact will this fine engraving on the reliability of the chips. With any luck, so we should see land the first SanDisk products - Toshiba's partner - using the new 19 nm chips by the end of the year ...

No comments:

Post a Comment