Intel announced it had begun to define the rules of its 10 nm lithography and extreme ultraviolet (EUV) were late. According to his schedule, Intel will market the end of 2013 14 nm and 10 nm two years later. It is at this stage that the firm has abandoned immersion lithography using a laser wavelength of 193 nm to go to the EUV.
Intel hopes that within four years, the technology has matured enough to provide attractive returns without incurring exorbitant costs too. Intel explained that the sine qua non for the EUV is 10 nm is used as scanners ready for mass production of wafers available either for the second half of 2012.
It's a strong message that it has launched to Nikon and ASML, which were present at LithoVision held last weekend. The founder was optimistic about the use of this technology. It is highly anticipated and becomes necessary when the costs associated with the use of the double pattern (double patterning) Constantly increasing.
Many competitors of Intel also has to burn on EUV at 14 nm (see "The 20 nm will not be the expected revolution"). This is not the first time that Intel would be late on a lithographic process. Indeed, while all the founders used the dip from the 45 nm, he waited for the 32 nm pitch. The firn not hesitate to focus on innovations on the structure of transistors (this was the first to use a metal grille and a layer isolantehHigh-k) and take advantage of mastering manufacturing methods that until a lithographic process produce better yields. 
Intel hopes that within four years, the technology has matured enough to provide attractive returns without incurring exorbitant costs too. Intel explained that the sine qua non for the EUV is 10 nm is used as scanners ready for mass production of wafers available either for the second half of 2012.
It's a strong message that it has launched to Nikon and ASML, which were present at LithoVision held last weekend. The founder was optimistic about the use of this technology. It is highly anticipated and becomes necessary when the costs associated with the use of the double pattern (double patterning) Constantly increasing.
Many competitors of Intel also has to burn on EUV at 14 nm (see "The 20 nm will not be the expected revolution"). This is not the first time that Intel would be late on a lithographic process. Indeed, while all the founders used the dip from the 45 nm, he waited for the 32 nm pitch. The firn not hesitate to focus on innovations on the structure of transistors (this was the first to use a metal grille and a layer isolantehHigh-k) and take advantage of mastering manufacturing methods that until a lithographic process produce better yields.
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