New AMD Radeon: the DDR3!

Surprisingly, AMD launched in Japan a range of Radeon: memory modules DDR3 Radeon stamped. The range includes three series Entertainment, and UltraPro Gaming Enterprise. Their features are anything but stunning: As you can see, the series Enterprise is not yet fully defined. The other two were seen in some Japanese shops.

The memory chips are AMD markings, but it seems more likely that the mark outsources manufacturing to industry experts.

• AMD introduces Radeon-branded system memory for consumers, graphics memory for video card makers (08/08/2011)
• AMD slips into desktop RAM biz (08/08/2011)
• AMD Enters Desktop Memory Market (08/08/2011)
• Apple releasing 21.5-inch iMac for education customers at $1000 (08/08/2011)
• Apple to release sub-$1000 21.5-inch iMac geared at education customers (08/08/2011)

NYSE: AMD (googlefinance)  Advanced Micro Devices (geolocation)  AMD (homepage)  Advanced Micro Devices (AMD) (wikinvest)  AMD (crunchbase)  Advanced Micro Devices (wikipedia)  Radeon (wikipedia)  DDR3 SDRAM (wikipedia)  

Hynix and Toshiba join forces for the STT-MRAM

Hynix and Toshiba have announced they will collaborate on the development of STT-MRAM and to unite in a joint venture for their manufacture. They also held an exchange of patents and have entered into agreements for deliveries. As clearly stated in Toshiba press release, is also a way to reduce the risks associated with marketing a new memory.

The announcement comes a week after Toshiba has published some interesting research on tunnel junctions with perpendicular magnetisation that require less power (see "Toshiba come out a STT-MRAM in 3 years"). These structures are central to the STT-MRAM memory or Spin-Transfer Torque Magnetoresistive Random Access Memory.

Toshiba and SanDisk are opening a new plant

Toshiba and SanDisk announced the opening of the Fab 5 using 300 mm wafers. It was built in a year, production has just started and the first chips should be delivered in August. The plant was later updated to burn in 19 nm, the statement said. The Fab 5 is located in Mie Prefecture in Japan.

The two companies say that the plant includes new measures against earthquakes. It should also consume 12% less CO2 than the Fab 4 with the use of LED and many energy saving measures. The Fab 5 has an area of 187,000 m2 over five floors. The construction of the Fab 5 was initially delayed due to the financial crisis of 2009, but once work began, schedules were met.

Elpida and Micron will they join forces?

Elpida, Micron and Nanya are in talks to decide to unite against Samsung for the production of DRAM. Several analysts have arrived at this conclusion DigiTimes reports that the new one. Specifically Elpida could join Inotera, a joint venture formed by Micron and Nanya, as an acquisition of shares held today by Formosa Plastics Group.

Micron and Elpida have not generally used to working together. In late 2008, early 2009, DigiTimes reports that they had tried to unite, but the negotiations failed because of disagreement about the monetary aspect of the partnership. In mid-2009, the market for DRAM has taken color with rising prices and the two companies decided to leave the negotiating table.

A thinner memory by Elpida

Elpida has this rune DRAM packaging using four layers with a thickness of only 0.8 mm. It is 20% less than traditional models that run at 1 mm, the statement said. With this product, the firm is primarily manufacturers of tablets and smartphones. The difference of only 0.2 mm may seem ridiculous to the general public, but we must understand that we are talking about design package is Package (PoP) which require specific memory modules of 0.8 mm.

A new ReRAM by Globafoundries

Researchers from the Universities of Singapore and Nanyang NUS (National University of Singapore), the scientific agency of Singapore, Peking University, Soitec Globalfoundries and presented a new ReRAM (also called RRAM) at the conference that took VLSI held this week. Each memory cell consists of a nickel layer, a hafnium oxide, aluminum oxide and a polysilicon electrode.

She has the distinction can be made with common materials and the production lines today. An electrode made of silicon, instead of the conventional platinum model presented so far, can greatly reduce costs. The ReRAM or Resistive RAM uses electrical resistance to characterize a bit. Low resistance will be a 1 or a 0 and a high electrical resistance will mean the opposite.

Patriot DDR3 for the players in AMD

The Patriot manufacturer has unveiled several new DDR3 memory kits designed for AMD platforms, and especially to future configurations based on AMD and 9-Series processor Bulldozer. However, nothing prohibits the use on other platforms compatible with DDR3 memory. Gamer baptized 2 Series AMD Black Edition, these kits include dual-channel memory modules of 2 GB or 4 GB running as the case at 1333 MHz (with 7-7-7-20 latencies or 9-9-9 - 24) or 1600 MHz (with 8-9-8-24 or 9-9-9-24 timings), all with voltages between 1.5 V and 1.65 V-1, 7S.

Elpida: 2 Gb DDR2 mobile 40 nm HKMG

Elpida announced the development of chips with 2 GB of memory LPDDR2 (DDR2 Mobile), etched in 40 nm technology and benefiting from HKMG (high-k metal gate). Using this technology allows the manufacturer said increased operating frequencies and reduced power consumption, a particularly important point when it comes to memory for mobile devices.

The manufacturer hopes to produce the first copies of these chips 2Gb memory LPDDR2 by the end of its fiscal year (before March 31, 2012). Etching processes in 30 nm and 25 nm Elpida should then also benefit from technology HKMG.

• GLOBALFOUNDRIES Displays Design Infrastructure for High-k Metal Gate Nanotechnology (02/06/2011)
• Elpida to develop 4 GB DRAM chip for smartphones (07/04/2011)
• Clinical Tests on Silicon Reveals Antifuse Technology is Scalable (12/04/2011)
• Why Intel's 22nm technology really matters (04/05/2011)
• Elpida develops industry's first 25nm process DRAM (02/05/2011)

NEC memory to replace flash and RAM

The battle for the future memory rages between NEC and the dance with the "CAM", alias Content Addressable Memory. The Japanese company with promises that this memory will be possible to replace the conventional RAM and flash memory. The operation is based on MRAM (Magnetic RAM) with a "magnetic wall" that moves and can set the data area, as shown in the chart.

Memory is indeed as fast as RAM with an access time of 5 nanoseconds - flash memory is around a millisecond - but is able to keep the information without being replenished, such as flash memory. The chips currently produced are only 16 kilobits and etched in 90 nm, which is far from current standards, but they could eventually replace flash memory and RAM, which would provide computers able to start immediately.

• NEC makes content addressable memory to take data deposits sans power, RAM green with envy (13/06/2011)
• NEC outs spintronics content-addressable memory tech (13/06/2011)
• NEC creates storage chip as fast as RAM (13/06/2011)
• Future MacBook Air could retrieve data a thousand times faster, thanks to new CAM chips from NEC (13/06/2011)
• NEC Develops Zero Standby Power Semiconductor Tech (14/06/2011)

NEC (homepage)  NEC (wikipedia)  Random-access memory (wikipedia)  

Samsung to DDR3 3x nm for all

While last week Samsung unveiled DDR3 memory modules of 32 GB for servers and using memory chips etched 3x nm, it was the turn of the computer of the man in the world to take advantage of these chips Memory DDR3 generation. Available format UDIMM (VLP, Very Low Profile) and SO-DIMMs in capacities of 2 GB and 4 GB, these DDR3 memory modules operate at a frequency of 1600 MHz but do not have heat sinks.

TDJ: DDR3 G. Skill Sniper

Our fellow Cowcotland recently released a test kit manufacturer's Sniper DDR3 G. Skill. Composed of two strips of DDR3 running at 1600 MHz, dual-channel kit of 8 GB support timings of 9-9-9-25 with a voltage of 1.25 V. Memory modules also benefit from heatsinks look at "gamer." Verdict?

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G.Skill (homepage)  G.Skill (wikipedia)  DDR3 SDRAM (wikipedia)  

Samsung: 32 GB DDR3 "30 nm" in RDIMM

Samsung has announced the launch of mass production of modules from 32 GB DDR3 RDIMM format using memory chips with 4 Gb etched 3x nm. For servers and workstations, these RDIMM memory modules operate at a frequency of 1866 MHz with a voltage of 1.35 V. For comparison, the previous 32 GB modules equipped with chips etched 4x nm operating at only 1333 MHz with a voltage of 1.5 V.

The new DDR3 RDIMM memory modules should be both faster and more energy efficient than previous ones. It remains to know the price ...

• Samsung begins mass producing 30nm-class, 32-gigabyte memory modules for green IT systems (31/05/2011)
• Samsung starts producing 30nm 32GB DDR3 modules (31/05/2011)
• Linaro and Samsung offer devs Origen board with Exynos 4210 chipset (30/05/2011)
• What are the types of motherboards in the market (29/05/2011)
• Samsung's MacBook Air Competitor (16/05/2011)

DDR3 SDRAM (wikipedia)  

A-Data 4 GB DDR3-1333 low voltage

The catalog of the manufacturer A-Data expands with the arrival of two new dual-channel kits of DDR3-1333. Consisting of two 2 GB modules, these kits come sit in the ranges XPG (Xtreme Performance Gear) More Gaming and A-Data. Equipped with an aluminum radiator, the 2GB DIMMs support timings of 8-8-8-24 to 9-9-9-24 Plus version and the model for gaming, all with an operating voltage of 1.35 V.

When Apple is using the pictures on its customers

Cliché No. 1 on the Apple computer users: the art, they do not know, they buy the design. And Apple has obviously understood what "cliché" and applies to its support. When a client wanting to add memory to an iMac G5 is seeking information on the Apple site, it can fall on a note of the knowledge base that explains the principle of dual channel.

The extension is effective - even if the concept of placing two parallel bars is not complicated - but especially the last paragraph that is challenging, as you can see. Apple thus tries to reassure customers by saying that it's not complicated, especially playing on the clichés ... Remember however that the analogy with the socks is the average side of Apple: the company sold iPod socks and they were not offered in pairs ...

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Elpida: of the 25 nm DRAM for July

The manufacturer Elpida is currently working on the development of chips with 2 Gb DDR3 memory etched into 25 nm. Capable of operating at a frequency of 1866 MHz with a voltage of 1.5 volts (at 1600 MHz with only 1.35 V), these chips DRAM posted a 15% lower consumption (operating) that displayed by their equivalent 30 nm.

Standby consumption is even lower than 20%. Mass production of these chips 2Gb is scheduled for July. Elpida finally indicates he is also working on chips with 4 Gb of mass production could begin before the end of the year.

• Elpida develops industry's first 25nm process DRAM (02/05/2011)
• Elpida says develops 4-gigabit DRAM for smart phones (07/04/2011)
• UPDATE 1-Elpida develops new DRAM for smart phones, shares jump (07/04/2011)
• Elpida develops new DRAM for smartphones (07/04/2011)
• Elpida to develop 4 GB DRAM chip for smartphones (07/04/2011)

Dynamic random access memory (wikipedia)  Elpida Memory (homepage)  Elpida Memory (wikipedia)  

Elpida launches its 30 nm DRAM

Elpida said it will begin mass production of 30 nm DRAM etched next month. The firm had sent copies of the first test last December (see "The DDR3 SO-DIMM Elpida consumes less") and is now preparing for their marketing. She initially allocate 20% of its production to these new chips to increase to 30% next quarter.

It will initially produce modules of 2 Gb, then will move to 4 Gb DDR3 in three months. The firm says that this new fine engraving offers 45% higher yields at 40 nm and the diseases consume 20% less energy. Elpida will also appeal to Rexchip plants that will dedicate 50% of its production capacity for these new chips.

Of DDR3 Plug and Play At Kingston

The catalog of Kingston grew with the arrival of several new HyperX memory kits. Certified to work with platforms Sandy Bridge (which of course does not you can use them on other platforms), these kits are advertised as "Plug and Play" by the manufacturer, indicating that simply strips that make up these kits comply with JEDEC recommendations.

Either. So we find two kits of 2 x 2 x 2 GB and 4 GB of DDR3-1600 (DIMM) running with timings of 9-9-9, all with a voltage of 1.5 V. The 4 GB kit is available at $ 67, against 122 dollars for the kit's side 8 GB kits for laptops (and therefore the format SO-DIMM), Kingston offers kits of 4 and 8 GB of DDR3 memory -1600 (9-9-9) and DDR3-1866 (11-11-11), all here as well with a voltage of 1.5 V.

A smartphone is possible with 128 GB Toshiba

Toshiba has just demonstrated the first modules of NAND 128 GB etched into 19 nm. These are the smallest cell NAND now, and if all goes well, mass production should start during the summer. These modules have 2 MLC bits per cell and account for 8 GB in a die of 118 mm2. Toshiba is then able to combine 16 dies in one package for a chip with 128 GB capacity is two times higher than the previous record.

TDJ: Patriot Sector 7, Belkin Conserve Insight

Our fellow Cowcotland just put online a test kit "Sector 7" 2 x 2 GB Patriot DDR3 home. Clocked at 1600 MHz, the strips that make up this kit support timings of 7-8-7-21 with an operating voltage of 1.65 V. Verdict? For its part, our fellow GinjFo recently posted a review of a product very useful to know the consumption of high-tech devices, the counter Insight Belkin Conserve ...

• SECTOR 7 offers up some new motion-capture images and an updated synopsis (31/03/2011)
• Sort of a Glimpse at Sector 7's Monster (31/03/2011)
• Is Electricity Burning Your Money? - The Belkin Conserve Insight Energy Use Monitor Will Let You Know (01/03/2011)
• Earth Day Gadget: Belkin Conserve Valet (14/04/2011)
• Belkin Components Belkin 7" Mini Laptop Carrying Case for Netbooks (20/04/2011)

Sector 7 (wikipedia)  

TDJ: Kingston Genesis 2133

Our fellow Cowcotland recently released a test kit Hyper-X DDR3-2133 Kingston, a kit combining two dual-channel memory modules of 2 GB for a total of 4 GB of memory. Designed for Intel and AMD platforms, the toolkit supports timings of 9-9-9-24 at a frequency of 2133 MHz, all with an operating voltage of 1.65 V.

Verdict?

• Kingston has best year ever in 2010 with record $5.6B revenue (15/03/2011)
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