Intel and Micron (joint venture IMFT) just announced a new generation of flash memory, engraved in 20 nm instead of 25 nm currently used. Planned with a capacity of 8 GB per chip, the memory type MLC reduces from 30 to 40% the size of the chip compared to a memory etched into 25 nm. KEYWORDS Announces endurance and performance similar to chips in 25 nm, which is a good point.
The target is not - for once - the world of SSD but that of mobility. Smartphones, pads, memory cards and other ultraportables need more storage space in a space smaller and smaller, to increase the battery capacity. With 118 mm ², memory in 20 nm is perfect for this type of use. The memory is expected to enter mass production during the second half and IMFT hopes to produce chips of 16 GB pretty quickly.
Hopefully qu'OCZ and other SSD manufacturers think of us know when they will use this memory ... 
The target is not - for once - the world of SSD but that of mobility. Smartphones, pads, memory cards and other ultraportables need more storage space in a space smaller and smaller, to increase the battery capacity. With 118 mm ², memory in 20 nm is perfect for this type of use. The memory is expected to enter mass production during the second half and IMFT hopes to produce chips of 16 GB pretty quickly.
Hopefully qu'OCZ and other SSD manufacturers think of us know when they will use this memory ...
- Intel and Micron reach flash frontier (15/04/2011)
- Intel/Micron move to 20nm NAND flash production (15/04/2011)
- Intel and Micron announce new 20nm NAND Flash manufacturing process (14/04/2011)
- Intel and Micron Pack More Flash Memory in Less Space (15/04/2011)
- Intel and Micron shrink NAND flash (14/04/2011)
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